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Selective Pattern Transfer of Nano-Scale Features Generated by FE-SPL in 10 nm Thick Resist Layers

Received: 8 January 2018     Accepted: 20 January 2018     Published: 7 March 2018
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Abstract

High performance single nanometer lithography is an enabling technology for beyond CMOS devices. In this terms a novel mask- and development-less patterning scheme by using electric field, current controlled Scanning Probe Lithography (FE-SPL) in order to pattern structures on different samples was developed. This work aims to manufacture nanostructures into different resist by using FE-SPL, whereas plasma etching at cryogenic temperatures is applied for an efficient pattern transfer into the bottom Si substrate. The challenge for future quantum devices, generated by SPL and cryogenic etching, is finding a resist that is at most 10 nm in thickness and has a plasma durability high enough for pattern transfer into silicon. As a first step towards future quantum devices the silicon-to-resist selectivity of calixarene, AZ Barli, poly (3-hexylthiophen-2, 5-diyl) and polymethylmethacrylat for the anisotropic cryogenic dry etching process was estimated. A silicon-to-resist selectivity of about 4:1 for each of these resists was found. With these results, nano-scale, highly parallel double line features in silicon for future double patterning were generated.

Published in American Journal of Nano Research and Applications (Volume 6, Issue 1)
DOI 10.11648/j.nano.20180601.12
Page(s) 11-20
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2018. Published by Science Publishing Group

Keywords

Field Emission Scanning Probe Lithography, Cryogenic Plasma Etching, Single-Electron Devices

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Cite This Article
  • APA Style

    Martin Hofmann, Cemal Aydogan, Claudia Lenk, Yana Krivoshapkina, Steve Lenk, et al. (2018). Selective Pattern Transfer of Nano-Scale Features Generated by FE-SPL in 10 nm Thick Resist Layers. American Journal of Nano Research and Applications, 6(1), 11-20. https://doi.org/10.11648/j.nano.20180601.12

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    ACS Style

    Martin Hofmann; Cemal Aydogan; Claudia Lenk; Yana Krivoshapkina; Steve Lenk, et al. Selective Pattern Transfer of Nano-Scale Features Generated by FE-SPL in 10 nm Thick Resist Layers. Am. J. Nano Res. Appl. 2018, 6(1), 11-20. doi: 10.11648/j.nano.20180601.12

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    AMA Style

    Martin Hofmann, Cemal Aydogan, Claudia Lenk, Yana Krivoshapkina, Steve Lenk, et al. Selective Pattern Transfer of Nano-Scale Features Generated by FE-SPL in 10 nm Thick Resist Layers. Am J Nano Res Appl. 2018;6(1):11-20. doi: 10.11648/j.nano.20180601.12

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  • @article{10.11648/j.nano.20180601.12,
      author = {Martin Hofmann and Cemal Aydogan and Claudia Lenk and Yana Krivoshapkina and Steve Lenk and Burkhard Volland and Marcus Kaestner and Burhanettin Erdem Alaca and Eberhard Manske and Ivo Rangelow},
      title = {Selective Pattern Transfer of Nano-Scale Features Generated by FE-SPL in 10 nm Thick Resist Layers},
      journal = {American Journal of Nano Research and Applications},
      volume = {6},
      number = {1},
      pages = {11-20},
      doi = {10.11648/j.nano.20180601.12},
      url = {https://doi.org/10.11648/j.nano.20180601.12},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.nano.20180601.12},
      abstract = {High performance single nanometer lithography is an enabling technology for beyond CMOS devices. In this terms a novel mask- and development-less patterning scheme by using electric field, current controlled Scanning Probe Lithography (FE-SPL) in order to pattern structures on different samples was developed. This work aims to manufacture nanostructures into different resist by using FE-SPL, whereas plasma etching at cryogenic temperatures is applied for an efficient pattern transfer into the bottom Si substrate. The challenge for future quantum devices, generated by SPL and cryogenic etching, is finding a resist that is at most 10 nm in thickness and has a plasma durability high enough for pattern transfer into silicon. As a first step towards future quantum devices the silicon-to-resist selectivity of calixarene, AZ Barli, poly (3-hexylthiophen-2, 5-diyl) and polymethylmethacrylat for the anisotropic cryogenic dry etching process was estimated. A silicon-to-resist selectivity of about 4:1 for each of these resists was found. With these results, nano-scale, highly parallel double line features in silicon for future double patterning were generated.},
     year = {2018}
    }
    

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  • TY  - JOUR
    T1  - Selective Pattern Transfer of Nano-Scale Features Generated by FE-SPL in 10 nm Thick Resist Layers
    AU  - Martin Hofmann
    AU  - Cemal Aydogan
    AU  - Claudia Lenk
    AU  - Yana Krivoshapkina
    AU  - Steve Lenk
    AU  - Burkhard Volland
    AU  - Marcus Kaestner
    AU  - Burhanettin Erdem Alaca
    AU  - Eberhard Manske
    AU  - Ivo Rangelow
    Y1  - 2018/03/07
    PY  - 2018
    N1  - https://doi.org/10.11648/j.nano.20180601.12
    DO  - 10.11648/j.nano.20180601.12
    T2  - American Journal of Nano Research and Applications
    JF  - American Journal of Nano Research and Applications
    JO  - American Journal of Nano Research and Applications
    SP  - 11
    EP  - 20
    PB  - Science Publishing Group
    SN  - 2575-3738
    UR  - https://doi.org/10.11648/j.nano.20180601.12
    AB  - High performance single nanometer lithography is an enabling technology for beyond CMOS devices. In this terms a novel mask- and development-less patterning scheme by using electric field, current controlled Scanning Probe Lithography (FE-SPL) in order to pattern structures on different samples was developed. This work aims to manufacture nanostructures into different resist by using FE-SPL, whereas plasma etching at cryogenic temperatures is applied for an efficient pattern transfer into the bottom Si substrate. The challenge for future quantum devices, generated by SPL and cryogenic etching, is finding a resist that is at most 10 nm in thickness and has a plasma durability high enough for pattern transfer into silicon. As a first step towards future quantum devices the silicon-to-resist selectivity of calixarene, AZ Barli, poly (3-hexylthiophen-2, 5-diyl) and polymethylmethacrylat for the anisotropic cryogenic dry etching process was estimated. A silicon-to-resist selectivity of about 4:1 for each of these resists was found. With these results, nano-scale, highly parallel double line features in silicon for future double patterning were generated.
    VL  - 6
    IS  - 1
    ER  - 

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Author Information
  • Department of Micro- and Nanoelectronic Systems, Ilmenau University of Technology, Ilmenau, Germany

  • Department of Micro- and Nanoelectronic Systems, Ilmenau University of Technology, Ilmenau, Germany

  • Department of Micro- and Nanoelectronic Systems, Ilmenau University of Technology, Ilmenau, Germany

  • Department of Micro- and Nanoelectronic Systems, Ilmenau University of Technology, Ilmenau, Germany

  • Department of Micro- and Nanoelectronic Systems, Ilmenau University of Technology, Ilmenau, Germany

  • Department of Micro- and Nanoelectronic Systems, Ilmenau University of Technology, Ilmenau, Germany

  • Department of Micro- and Nanoelectronic Systems, Ilmenau University of Technology, Ilmenau, Germany

  • Department of Mechanical Engineering, Koc University, Istanbul, Turkey

  • Department of Process Measurement and Sensor Technology, Ilmenau University of Technology, Ilmenau, Germany

  • Department of Micro- and Nanoelectronic Systems, Ilmenau University of Technology, Ilmenau, Germany

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